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NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver
Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TA = +25C), PD NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6mW/C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.15mW/C Total Device Dissipation (TC = +25C), PD NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W Thermal Resistance, Junction-to-Ambient, RthJA NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.5C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140C/W Lead Temperature (During Soldering, 1/16" from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300C Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP).
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage NTE128 NTE129 Collector-Base Breakdown Voltage NTE128 NTE129 Emitter-Base Breakdown Voltage NTE128 NTE129 Collector Cutoff Current NTE128 ICBO V(BR)EBO V(BR)CBO V(BR)CEO IC = 30mA, IB = 0 IC = 10mA IC = 100A, IE = 0 IC = 10A IE = 100A, IC = 0 IE = 10A VCB = 90V, IE = 0 VCB = 90V, IE = 0, TA = +150C NTE129 VCB = 60V VCB = 60V, TA = +150C Emitter Cutoff Current NTE128 NTE129 ON Characteristics (Note 2) DC Current Gain NTE128 hFE IC = 0.1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 150mA, VCE = 10V, TC = -55C IC = 500mA, VCE = 10V IC = 1.0A, VCE = 10V NTE129 IC = 100A, VCE = 5V IC = 100mA, VCE = 5V IC = 100mA, VCE = 5V, TC = -55C IC = 500mA, VCE = 5V IC = 1.0A, VCE = 5V Collector-Emitter Saturation Voltage NTE128 VCE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA NTE129 IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage NTE128 NTE129 Base-Emitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV VBE(sat) IC = 150mA, IB = 15mA 50 90 100 40 50 15 75 100 40 70 25 - - - - - - - - - - - - - - - - - - - - - - - - - - - 300 - - - - 300 - - - 0.2 0.5 0.15 0.5 1.1 0.9 1.1 V V V V V V V IEBO VBE = 5V, IC = 0 VBE = 5V 80 80 140 80 7 5 - - - - - - - - - - - - - - - - - - - - - - - - 0.01 10 50 50 0.010 10 V V V V V V A A nA A A A Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 1%.
Electrical Characteristics (Cont'd): TA = +25C unless otherwise specified)
Parameter Small-Signal Characteristics Current-Gain - Bandwidth Product (NTE128 Only) Output Capacitance NTE128 NTE129 Input Capacitance NTE128 NTE129 Small-Signal Current Gain NTE128 NTE129 Collector-Base Time Constant (NTE128 Only) Noise Figure (NTE128 Only) rbCc NF hfe Cibo fT Cobo IC = 50mA, VCE = 10V, f = 20MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, f = 1MHz VBE = 500mV, IC = 0, f = 1MHz VEB = 500mV, f = 1MHz IC = 1mA, VCE = 5V, f = 1kHz IC = 50mA, VCE = 10V, f = 100MHz IE = 10mA, VCB = 10V, f = 79.8MHz IC = 100A, VCE = 10V, RS = 1k, f = 1kHz 100 - - - - 80 1 - - - - - - - - - - - 400 12 20 60 110 400 4 400 4 ps dB MHz pF pF pF pF Symbol Test Conditions Min Typ Max Unit
Switching Characteristics (NTE129 Only) Storage Time Turn-On Time Fall Time ts ton tf IC = 500mA, IB1 = IB2 = 50mA IC = 500mA, IB1 = 50mA IC = 500mA, IB1 = IB2 = 50mA - - - - - - 350 100 50 ns ns ns
.370 (9.39) Dia Max .355 (9.03) Dia Max
.260 (6.6) Max
.500 (12.7) Min
.018 (0.45) Base Emitter Collector/Case
45
.031 (.793)

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